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|Title:||Effect of Alpha Particles on the Electrical Characteristics of the MIS: Au-Ta2O5-GaAs Devices|
|Authors:||S. H.S. Alnia'emi, A.S. Al-Rawass and S.M.B Al-Abasee|
|Publisher:||Deanship of Research and Graduate Studies , Yarmouk University, Irbid , Jordan|
|Description:||The paper aims to study the effect of alpha particles on the electrical properties of MIS:Au-Ta2O5-GaAs devices and on the electrical current transition mechanism. The devices are prepared by deposing a layer of gold with a thickness of 1000 ? by using the thermal evaporation method under a pressure of 10-5 torr to form the upper gate of the MIS construction. The prepared devices are irradiated with alpha particles from a 226 Ra source (0.5 ?Ci).|
|Appears in Collections:||Journal of Physics|
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